general description product summary the HT3402 uses advanced trench tec hnology to v ds 30v provide excellent r ds(on) ,low gate change and i d (at v gs =10v) 4a operation with gate voltages as low as 2.5v.this r ds(on) (at v gs =-10v) <55m device is suitable for use as a load switch r ds ( on ) (at v gs =-4.5v) <70m applications. r ds ( on ) (at v gs =-2.5v) <110m absolute maximum ratings ta=25c unless otherwise noted parameter symbol maximum units drain-source voltage v ds -30 v gate-source voltage v gs + 12 v continuous drain current (a) t a =25c i d 4 a t a =70c 3.4 junction and storage temperature range i dm 15 power dissipation (a) ta=25c p d 1.4 w ta=70c 1 junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics parameter symbol typ max units maximum junction-to-ambient(a) t 10s r ja 70 90 c/w maximum junction-to-ambient(a) steady-state 100 125 c/w maximum junction-to-lead(c) steady-state r jl 63 80 c/w HT3402 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (tj=25c unless otherwise noted) symbol parameter conditions min typ max units static parameters bv dss drain-source breakdown voltage i d =-250a, v gs =0v 30 v idss zero gate voltage drain current v ds =24v,v gs =0v 1 a tj=55 5 igss gate-body leakage current v ds =0v, v gs =12v 100 na v gs(th) gate threshold voltage v ds =v gs i d =-250a 0.6 1 1.4 v id(on) on state drain current v gs =4.5v, v ds =5v 10 a rds(on) static drain-source on-resistance v gs =10v, i d =4a 45 55 m ? t j =125c 66 80 v gs =4.5v, i d =3a 55 70 m ? v gs =2.5v, i d =2a 83 110 m ? g fs forward transconductance v ds =5v, i d =4a 8 s v sd diode forward voltage i s =1a,v gs =0v 0.8 1 v is maximum body-diode continuous current 2.5 a dynamic parameters c iss input capacitance vgs=0v, vds=-15v, f=1mhz 390 pf c oss output capacitance 54.5 pf c rss reverse transfer capacitance 41 pf r g gate resistance vgs=0v, vds=0v, f=1mhz 3 ? switching parameters qg total gate charge vgs=4.5v, vds=15v, id=4a 4.34 nc qgs gate source charge 0.6 nc qgd gate drain charge 1.38 nc t d(on) turn-on delaytime vgs=10v,vds=15v, r l =3.75 ? , r gen =6 ? 3.3 nc tr turn-on rise time 1 ns t d(off) turn-off delaytime 21.7 ns tf turn-off fall time 2.1 ns t rr body diode reverse recovery time i f =-4a, di/dt=100a/s 12 ns q rr body diode reverse recovery charge i f =-4a, di/dt=100a/s 6.3 nc HT3402 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given app lication depends on the user's specific board design. the current rating is based on the t 10s thermalresistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in fi gures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating. typical electrical and thermal characteristics HT3402 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristic s HT3402 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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